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Chemical mechanical polishing is essential for achieving global and local planarization of wafers in the IC manufacturing process, in which Chemical mechanical polishing (CMP) slurries are the main processing chemicals used. Depending on the objects of polishing, Anji’s chemical mechanical polishing slurries include copper slurries, barrier slurries, dielectric (silica-based and ceria-based abrasive) slurries, tungsten slurries, slurries for various substrates, formulated wet chemicals, and polishing slurries for new materials and applications. Currently, Anji’s copper and barrier slurries can meet the needs of chip manufacturers in China and has penetrated overseas markets. Other related polishing slurries are supplied to numerous chip manufacturers in China and abroad, and their production scale will be adapted to the needs of clients.
Used for the removal and planarization of copper and copper barrier layers in the integrated circuit manufacturing processes. Products have been used in mass production of logic chips . Development and validation of products continue for future technology nodes.
Used for the removal and planarization of tungsten in the integrated circuit manufacturing processes. Products have been used in mass production of logic chips etc. Development and validation of products continue for technology nodes under 28nm.
Used for the removal and planarization of intermediate electrical materials such as silicon dioxide and silicon nitride in the integrated circuit manufacturing processes.
Based on ceria abrasives, such slurries feature high-speed silica removal, high selectivity and high planarization efficiency, which are used for shallow trench isolation in IC manufacturing processes and other polishing processes where high-speed silica removal is required. Also, a wide range of new products have been developed to meet customer requirements.
Used for the polishing of silicon substrates and other semiconductor substrate materials. This product line includes silicon rough polishing slurries, silicon finishing slurries, silicon carbide slurries, gallium nitride slurries, etc.
To meet customers’s process requirements, Anji has developed various new technologies and processes based on chemical mechanical polishing slurries and the existing product platform. Included are through-silicon-via (TSV) slurries and hybrid bonding polishing slurries for 3D integration processes and special polishing slurries for new materials, such as polymers and carbon. A number of products have been mass-produced and supplied.
Formulated electronic wet chemicals refers to formulated wet electronic chemicals that achieve special functions through formulation technology and meet specific requirements of chip manufacturing processes. Anji offers a series of products, such as post etch cleaning solutions, photo resist stripper, post CMP cleaning solutions, etchants, and ECD solution and additives. Post etch cleaning solutions, photoresist strippers, and post polishing cleaning solutions have been widely used in the IC manufacturing processes on 8-inch and 12-inch wafers.
With a safe supply solution from hydroxylamine suppliers, Anji offers semi-aqueous aluminum post-etch cleaning solutions and amine-based aluminum post-etch cleaning solutions.
These products are used for the removal of post etch residues in the aluminum process of integrated circuits, providing excellent removal capability and low cost. The products have been mass produced for both 8 - and 12-inch logic and memory chips.
Used for the removal of post etch residues in copper interconnect damascene processes of integrated circuits. Our products offer excellent removal capability, low defectivity and low cost.
Used for IC hard-mask copper interconnect damascene post etch residue removal. The products offer high titanium nitride hard-mask removal capability, excellent post etch residue removal capability, low defectivity and low cost. The products have been mass produced for 28 nm logic chips and will be continuously validated on 28 nm and below technology nodes.
Used for effective removal of particles and chemical residues, prevention of copper corrosion, and defect reduction of the polished Cu wafer surface. Products can be applied to 130-28 nm copper post CMP cleaning processes.
Used for effective removal of particles and chemical residues and surface defect reduction on the polished silicon nitride surface.
Used for effective removal of particles and chemical residues, prevention of tungsten corrosion, and defect reduction of the polished tungsten wafer surface.
Used for effective removal of particles and chemical residues and surface defect reduction on the polished new materials surface.
For effective removal of particles and chemical residues, prevention of aluminum corrosion and defect reduction on the polished aluminum wafer surface.
Used for effective removal of by-products on the polishing pads, extension of the pad life and surface defect reduction on the polished wafer.
Used for wafer level packaging, MEMS, and beyond-Moore’s- law thick-film photoresist removal. The product features >100µm photoresist removal ability and low cost. They have been mass produced in the applications of 8- and 12- inch wafer level packaging (gold bumps, solder bumps, pillar bumps), MEMS, TSV and other processes.
Special processing etchants are offered in accordance with customer process requirements, including high selectivity phosphoric acid, based on liquid and solid surface treatment technology platforms.
Based on independent R&D and collaborations, Anji provides a product line of electro-chemical plating solutions and additives in IC damascene processes and advanced packaging applications.
